Langer EMV-Technik GmbH
Booth number: HALL A - 50339-05
www.langer-emv.de
About us
Langer EMV-Technik is in the forefront of research, development, and production in the field of EMC. Through EMC experimental seminars and EMC workshops we offer our comprehensive knowledge to our customers.
Our interference emission and interference immunity EMC measurement technology as well as the IC test system are used mainly in the development stage and are in worldwide demand.
Developers and designers gain new perspectives and more efficient working strategies for module- and IC developments with the EMC know how and measurement technology of Langer EMV-Technik GmbH.
The individual pre-compliance consulting services provided by Langer EMV-Technik GmbH help developers and designers quickly find solutions to complex EMC problems in IC, device, and module development.
We make both our comprehensive EMC expertise and research results available to our customers via practical experimental EMC seminars and in-house events .
Attention Distributors!
We're expanding our share in the US market and need your partnership to bring our innovative measurement technology to more customers.
Contact us today at sales@langer-emv.de to join our endeavors!
Address
Nöthnitzer Hang 31
01728 Bannewitz
Germany
E-mail: sales@langer-emv.de
Phone: +49 351 43009329
Internet: www.langer-emv.de
1521 85th Street NW
Bradenton, FL 34209 Bradenton
United States
E-mail: sales@testrack.com
Phone: +1 941 7200673
Internet: www.testrack.com
Contact person:
Sales Mario Lange
E-mail: sales@langer-emv.de
IC-Testsystem - Langer EMV-Technik GmbH - IC-EMC-Measurement
Apart from the layout and housing design, the characteristics of the ICs used play a key role for the EMC characteristics of devices. Reducing the size of the structure, operating voltages and operating points makes the ICs much more sensitive. If one approaches or even surpasses the 100 nm limit, the immunity compared to earlier ICs is reduced, a trend that is reflected in the device behaviour.
It is important that users of ICs are able to compare various types of IC on the basis of their EMC parameters. This enables the choice of the best IC, and means that the layout design and the device can be aligned to the IC's EMC parameters.
For manufacturers of ICs, good EMC characteristics for their products mean advantages over their competitors. The objective is thus to determine those parameters which are decisive for EMC immunity and emissions and allow engineers to draw conclusions for chip design.
It is nowadays common to quote a value of one to several kV in specifications as the ESD strength of electronic components (ICs, transistors) with reference to the human body model. With the human body model (HBM), a capacitor (100 pF) is charged with a test voltage and discharged on the device under test via 1500 ohm. The HBM is described in the standards MIL-STD-883G and in IEC 801-2. The machine model (MM) is a further test model that works according to the same principle.
Both models are only used to validate the immunity to destruction of the IC when handling the component during its production, packaging, transport and assembly. During MM or HBM tests, the test object is never connected to a voltage, i.e. it is not in operation.
…The IC test system can be used to analyse the behaviour of ICs under the selective influence of (conducted and radiated) disturbances and/or respective emissions. The insights gained from this analysis help semiconductor manufacturers optimise ICs and IC users overcome weak points in their electronic modules.
ESA1 Emission Development System Handy test station Interference emission for the developer's workplace
The ESA1 is a system of EMC tools for measuring the interference of assemblies and devices. The CS-ESA software allows the developer to quickly and comprehensively suppress interference affecting the DUT. Interference measurements taken during the development stage with ESA1 are proportional to the results from far-field measurements or from measurements with artificial networks. With the ESA1 tools disturbance sources can be localized, effects can be detected, and EMC measures individually determined. The effects of improvements implemented by ESA1 are proportional to the results from far-field measurements. ESA1 is designed for use at the developer’s working place.
Enhance Your EMC Testing with ESA1 – Featuring the Powerful CS-ESA Software for Comparable and well-documented emission measurements Leverage the advanced capabilities of CS-ESA software to quickly identify, analyze, and mitigate interference, ensuring your devices reach EMC standards efficiently and effectively.
P1 - Mini Burst Field Generators - interference immunity tools for EMC trouble shooting
The mini burst field generators are particularly small. They are used to identify and eliminate weak points in electronic assemblies in the development phase. They generate a burst or an ESD field at their tip. The mini burst generators are guided by hand across the equipment under test (e.g. printed circuit board) with their field-emitting tips close to its surface. The weak points respond to the pulsed field and malfunctions will occur. The burst field generators can be applied to selected individual sections of the circuit board design to identify potential weak points (faults in the ground system, individual traces or IC pins). Separate magnetic (P11 and P12) and electric (P21) coupling allows an optimal adaptation of EMC countermeasures to the respective weak point.
IC Scanner 4-Axis Positioning System with High-Resolution Near-Field Measurement
The ICS 105 IC scanner allows for measurements of high-frequency near fields above ICs. Depending on the used ICR near-field microprobe magnetic or electric fields can be measured with a measuring resolution of 50 to 100 µm. The probe can also be automatically rotated to determine the magnetic field's direction.
Optionally the ICS 105 scanner can be used for measurements above small assemblies in combination with UH-DUT universal holder and SH 01 probe holder.
The IC scanner can be set up for ESD or EFT immunity tests on ICs in a few simple steps.
ICS 105: High-Resolution Near-Field Measurements with ICR Microprobes and ChipScan-Scanner Software - Perform precise measurements with ICR near-field microprobes, achieving resolutions of 50 to 100 µm. Mount various sizes of circuit boards on the UH-DUT universal holder and automate your testing with ChipScan-Scanner software for fast and accurate evaluation.
ICS 105: Versatile Near-Field Measurements with ChipScan-Scanner Software and UH-DUT Holder - Mount various sizes of circuit boards on the UH-DUT universal holder for precise measurements with the ICR near-field microprobe. Automate and visualize electric and magnetic field measurements with ChipScan-Scanner software for fast and accurate evaluation.
Set E1 - Immunity Development System
Field Sources: Essential Tools for EMC Immunity Testing During Development
Field sources are essential tools for EMC immunity testing during the development phase. They enable developers to selectively apply electric or magnetic fields to various surface areas of electronic assemblies.
Initial Low-Resolution Field Application
Typically, this process begins with low-resolution field sources to influence larger areas of the assembly with broad field bundles. This helps to narrow down the fault areas but does not determine the exact causes of the disturbances. Therefore, higher-resolution field sources are subsequently used. These emit narrow and concentrated field bundles, allowing clear identification of weak points within the fault areas. It is essential that the assembly is subjected to a standard generator (ESD or Burst) according to the norm. The resulting fault patterns are precisely recorded and must be replicated during localization with field sources.
Note: During analysis with field sources, new fault patterns may be discovered. These often occur below the disturbance threshold of the standard test and are therefore less critical. These additional fault patterns can be eliminated afterward, contributing to the hardening of the assembly.
Practical Example
Figures 1 to 3 show an electronic circuit where a processor controls a screen via HDMI. The processor is connected to a memory circuit (RAM) via bus lines (Figures 1-3) and continuously retrieves its program from it.
Subjecting the assembly to a standard generator results in the fault pattern where the screen content on the HDMI monitor freezes. The processor can only be reset by interrupting its power supply.
The first task is to reproduce the screen-freezing fault when the assembly is subjected to field sources. The HDMI system (connectors, HDMI cable, monitor) is initially considered a potential fault source. The troubleshooting begins with the BS 02 magnetic field source, the largest magnetic field source in the E1 set development system. Alternatively, the BS 02-h from the H2/3 field source set in combination with a burst generator or the BS 02-h from the TroubleStar ESD/Burst TS 23 set can be used. The BS 02 is guided over the assembly at a maximum distance of two centimeters (Figure 1). The possible localization of the weak point corresponds approximately to the size of the field source head.
When the HDMI system is subjected to the field source, image disturbances or a black screen occur, which do not match the sought fault pattern. Subsequently, the entire assembly is subjected to the BS 02 field source step by step. The sought fault can indeed be reproduced in the area of the processor and RAM.
Using the higher-resolution BS 04 DB field source (E1 set), the fault can be further localized (Figure 2). Alternatively, the BS 04DB-h from the H2 and H3 field source sets in combination with a burst generator can be used.
Initially, it is unclear whether the cause lies in the RAM, the traces, or the processor. Subjecting the surface of the memory circuit to the field source generates new fault patterns on the monitor (similar to a checkerboard pattern), which are initially not relevant (see above).
For further analysis, the BS 05 DU field source is used to examine the area of the bus traces between the two ICs (Figure 3). The fault pattern can be directly reproduced on the traces. With this knowledge, appropriate countermeasures can now be tested.
To eliminate the interference on the bus lines, they need to be shielded. For testing, the bus lines are covered with copper foil, and the assembly is subjected to the standard generator again. The result is that the shielding prevents the previous fault pattern. The successful shielding can now be implemented in practice through appropriate layout measures. For example, the bus lines could be placed in an inner layer and shielded with a ground plane.
Note: This immunity test should be conducted at the earliest development stage (first prototype) to avoid unnecessary layout changes. Through the targeted, strategic use of field sources, developers gain effective tools to identify weak points in the design and take targeted countermeasures.
1. Analysis of disturbance current paths Disturbance currents flow through the modules of an EUT during burst tests. The corresponding magnetic fields generate voltage differences in the GND system and/or induce voltages in signal loops. When a functional fault is produced in the EUT, the first step of the subsequent fault localization is to examine individual parts of the EUT such as individual modules, individual cable connections, small areas of a large module.
2. Fault localization with field sources The functional fault is often caused by magnetic fields of the disturbance current or by electric fields (inductive coupling). In order to pinpoint the place of interference, these fields are now injected with field sources which generate a magnetic or electric field in a small space. If a functional fault occurs when conducted disturbance current flows into and out of the EUT, magnetic field sources are used for fault localization. E field sources are used in the event that the fault occurs during inductive coupling.
3. Monitoring of EUT logic signals Signals are monitored when disturbances are coupled in so as to recognize disturbed logic signals and test the efficiency of EMC measures. These measurements allow statements with regard to the instantaneous operating state of EUTs if an interference is not immediately recognizable or not at all from outside. A sensor S21 is installed in the EUT for signal monitoring. This sensor transmits a signal which is significant for the EUT function without interacting with the EUT to the SGZ 21 via optical fibre.
4. Measuring burst magnetic fields The E1 allows measurements of burst magnetic fields in the EUT with hardly any interaction with the EUT, thus indicating the run of burst currents. Each measurement of burst magnetic fields provides two results: the amount of the magnetic field and the direction of the magnetic field. The direction of the magnetic field lines - the current involved flows at an angle of 90° to them - can be easily determined by turning the probe. It is thus possible to obtain a precise idea of the magnetic field in the EUT and to assess which structures are particularly at risk.
The surface of the E field source head allows the extensive coupling into housing surfaces and interior areas, connection technology and assemblies with conducting path structures and ICs ( e.g. bus systems, LCD displays). Furthermore its tip can be used for the localization of small E- field sensitive weak spots (conducting paths, quartz crystal, pull-up resistance, ICs).
The SGZ 21 burst generator generates floating, pulse shaped disturbance. Its outputs are seperated symmetrically and galvanically. SGZ 21 can be partially coupled to constructional parts, cables, shieldings, ground connections; directly in assemblies or indirectly via field sources of a device under test. A pulse rate counter with an optical input which detects signals from assemblies is integrated into SGZ 21. During burst testing with the S21 sensor which is installed on the assembly, electical signals from the assembly are transformed into optical signals. The pulse rate counter of SGZ 21 detects these optical signals. Futhermore, the MS 02 magnetic field probe can measure burst magnetic fields on the assembly and can transform them into optical signals during the test. This measuring procedure is suitable for signal monitoring during the burst tests or before and after measurements for controlling the EMC steps. The SGZ 21 conforms to following standards: EN 50 081-1/-2 and EN 50 082-1/-2.
